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IRFBF20 MOSFET – 900V 1.7A N-Channel Power MOSFET TO-220 Package

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₹90.00 (excluding 18% GST)

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Description

The IRFBF20 N-channel MOSFET features a low R<sub>DS(on)</sub> and minimal gate charge, optimizing it for efficient switching performance at high voltages. Packaged in a TO-220 configuration, it can be easily mounted and used with a heatsink to handle higher temperatures and power dissipation.

Features

  • High Voltage Capability: 900V drain-source voltage.
  • Efficient Switching: Low gate charge and R<sub>DS(on)</sub> for faster, more efficient switching.
  • High Durability: Rugged design to withstand power surges and high temperatures.
  • TO-220 Package: Easy mounting with high thermal performance.

Specifications

  • Device Type: N-channel MOSFET
  • Drain-Source Voltage (V<sub>DS</sub>): 900V
  • Continuous Drain Current (I<sub>D</sub>): 1.7A (at 25°C)
  • Gate Threshold Voltage (V<sub>GS(th)</sub>): 2.0 – 4.0V
  • R<sub>DS(on)</sub>: 4.0 ohms max at V<sub>GS</sub> = 10V
  • Total Gate Charge (Qg): 53nC at V<sub>GS</sub> = 10V
  • Power Dissipation (P<sub>D</sub>): 125W
  • Package Type: TO-220
  • Operating Junction Temperature (T<sub>j</sub>): -55°C to 150°C

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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