Description
The CT60AM-18F IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor device designed for applications requiring high voltage and high current capabilities. This IGBT combines the easy drive capability of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. It is suitable for various applications, including motor drives, power inverters, and industrial equipment.
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