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IRF5305 MOSFET – 55V 31A P-Channel HEXFET Power MOSFET TO-220 Package

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Description

The IRF5305 is commonly used in power switching applications, DC-DC converters, and load management circuits. With a 55V drain-to-source voltage rating and a 31A continuous drain current capacity, this MOSFET is robust and reliable for handling substantial power loads. Its low Rds(on) contributes to reduced power loss, making it efficient in high-power applications.

Features

  • High Current Capability: Handles a maximum continuous drain current (Id) of 31A.
  • Low Rds(on): Low on-resistance (typically 0.044 ohms) for minimal conduction losses.
  • High Power Dissipation: Rated for 110W power dissipation, allowing it to handle heavy-duty applications.
  • P-Channel Configuration: Simplifies design for high-side switching, eliminating the need for gate drivers.
  • Thermal Efficiency: TO-220 package enables effective thermal dissipation and easy heatsink attachment.

Specifications

Number of Channels 1 Channel
Transistor Polarity P-Channel
Drain-Source Breakdown Voltage (Vds) -55V
Continuous Drain Current (Id) -31A
Drain-Source Resistance (Rds On) 60mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 63 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 110W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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