Description
This P−Channel Logic Level MOSFET is produced uses advanced low voltage Power Trench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc−dc conversion.
Features
RDS(ON) = 70 mΩ @ VGS = -4.5V
RDS(ON) = 110 mΩ @ VGS = -2.5V
- Low Gate Charge (7.2nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power Version of Industry Standard SOT−23 Package. Identical Pin−Out to SOT−23 with 30% Higher Power Handling Capability
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Note
* Product Images are shown for illustrative purposes only and may differ from actual product
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