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CT60AM-18F IGBT – 900V 60A High Voltage Current IGBT

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₹215.00 (excluding 18% GST)

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Description

The CT60AM-18F IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor device designed for applications requiring high voltage and high current capabilities. This IGBT combines the easy drive capability of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. It is suitable for various applications, including motor drives, power inverters, and industrial equipment.

Features

  • High Voltage Rating: 900V, allowing it to handle high-voltage applications.
  • Current Rating: 60A, suitable for medium to high-power applications.
  • Low On-State Voltage Drop: Ensures efficient operation and reduced power loss during conduction.
  • Fast Switching Speed: Provides improved efficiency in switching applications, making it ideal for PWM (Pulse Width Modulation) control.
  • Robust Construction: Designed to withstand high thermal and electrical stresses.
  • Isolation: Offers high input impedance, reducing the current requirement for driving circuits.

Specifications

  • Type: N-channel IGBT
  • Collector-Emitter Voltage (VCE): 900V
  • Continuous Collector Current (IC): 60A
  • Gate-Emitter Voltage (VGE): ±20V
  • Max Gate Power Dissipation: 1W
  • Thermal Resistance (Junction to Case): Typically around 0.5°C/W (check specific datasheet for accuracy).
  • Operating Temperature Range: -40°C to +150°C
  • Packaging: Usually available in TO-220 or similar package for easy mounting and heat dissipation.

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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