10 In stock
₹69.00 (excluding 18% GST)
10 In stock
CompareThe IRFBG30 is an N-channel power MOSFET designed for high-voltage applications. With a maximum drain-source voltage of 1000V and a continuous drain current of 3.1A, it provides robust performance in circuits requiring both high voltage handling and moderate current capabilities. Its TO-220 package allows for efficient heat dissipation, making it suitable for power conversion, motor control, and other high-voltage applications.
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 1000V |
| Continuous Drain Current (Id) | 3.1A |
| Drain-Source Resistance (Rds On) | 5Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 80 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 125W |
* Product Images are shown for illustrative purposes only and may differ from actual product
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