10 In stock
₹102.00 (excluding 18% GST)
10 In stock
CompareThe IRFBE30 is an N-channel power MOSFET designed for high-voltage applications. With a maximum drain-source voltage of 800V and a continuous drain current of 4.1A, this MOSFET is well-suited for circuits that operate in environments where high voltage handling and efficient switching are critical. Its TO-220 package offers excellent thermal management, making it ideal for high-power applications where heat dissipation is essential.
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 800V |
| Continuous Drain Current (Id) | 4.1A |
| Drain-Source Resistance (Rds On) | 3Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 78 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 125W |
* Product Images are shown for illustrative purposes only and may differ from actual product
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