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IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220 Package

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10 In stock


99.00 (excluding 18% GST)

10 In stock

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Description

The IRFB4110 offers a combination of low Rds(on) and high current capability, making it ideal for high-power switching applications. With a very low on-resistance, it minimizes conduction losses, thereby improving overall efficiency. Its rugged design, combined with its high current tolerance, allows it to handle power-intensive tasks reliably.

Features

• High efficiency synchronous rectification in SMPS

• Uninterruptible power supply

• High speed power switching

• Hard switched and high frequency circuits

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 180A
Drain-Source Resistance (Rds On) 4.5Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 210 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 370W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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