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IRF9610 MOSFET – 200V 1.8A P-Channel Hexfet Power MOSFET TO-220 Package

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₹79.00 (excluding 18% GST)

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Description

The IRF9610 is designed with advanced HEXFET technology, enabling high-speed switching with low power loss. Its P-channel configuration allows it to simplify circuit designs that require high-side switching, particularly in applications with a negative power supply or ground reference for easier control. With a maximum drain-source voltage of 200V and a current capability of up to 1.8A, it is suitable for applications requiring moderate power handling.

Features

  • P-Channel MOSFET with a TO-220 package for easy mounting and heat dissipation.
  • 200V Drain-Source Voltage (V<sub>DS</sub>), which allows it to handle higher voltages in various power supply and inverter applications.
  • 1.8A Continuous Drain Current (I<sub>D</sub>) at 25°C.
  • Low Gate Charge for efficient switching at higher frequencies.
  • Enhanced Ruggedness to withstand load transients and switching stresses.

Specifications

Number of Channels 1 Channel
Transistor Polarity P-Channel
Drain-Source Breakdown Voltage (Vds) -200V
Continuous Drain Current (Id) -1.8A
Drain-Source Resistance (Rds On) 3Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 11 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 20W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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