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IRF830AL MOSFET – 500V 4.5A N-Channel Power MOSFET TO-220 Package

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Description

The IRF830AL is a high-voltage N-channel power MOSFET designed for efficient switching applications. It features a robust construction and is housed in a TO-220 package, making it suitable for various power electronic applications where high voltage and moderate current handling are required.

Features

  • High Voltage Capability: Designed to withstand a maximum drain-source voltage of 500V, suitable for high-voltage applications.
  • Moderate Current Handling: Capable of conducting continuous drain currents of up to 4.5A, making it versatile for various power applications.
  • Low On-Resistance (RDS(on)): Reduces conduction losses, enhancing overall efficiency and thermal performance.
  • Fast Switching Speed: Allows for high-speed operation, making it ideal for switching applications.
  • Thermal Performance: The TO-220 package design provides good heat dissipation, allowing for reliable operation under load.
  • Low Gate Charge (Qg): Minimizes switching losses, particularly beneficial in high-frequency applications.

Specifications

  • VDS (Drain-Source Voltage): 500V
  • ID (Continuous Drain Current): 4.5A (at Tj = 25°C)
  • Pulsed Drain Current (IDM): 30A (typical)
  • RDS(on): Typically 0.5Ω at VGS = 10V
  • Gate Threshold Voltage (VGS(th)): 2V to 4V (typical)
  • Total Gate Charge (Qg): Approximately 50nC at VGS = 10V
  • Maximum Power Dissipation (PD): 65W (at Tj = 25°C)
  • Operating Junction Temperature (Tj): -55°C to +150°C
  • Package Dimensions: TO-220 (provides larger surface area for heat dissipation)

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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