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IRF640 MOSFET – 200V 18A N-Channel Power MOSFET TO-220 Package

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Description

The IRF640’s high voltage and current ratings, combined with a low on-resistance, make it well-suited for efficient switching in high-power systems. It is designed to operate with fast switching speeds, minimizing power losses, and is versatile enough to be used in a range of power applications.

Features

  • High Voltage Tolerance: Supports a maximum drain-to-source voltage of 200V.
  • High Current Capability: Can handle up to 18A continuous drain current.
  • Low On-Resistance (Rds(on)): Low Rds(on) (typically 0.18 ohms) to reduce conduction losses.
  • Efficient Switching Performance: Fast switching with minimal delay times for reduced switching losses.
  • TO-220 Package: Provides effective thermal management and easy heatsink mounting options.

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 18A
Drain-Source Resistance (Rds On) 0.15Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 70 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 150W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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