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IRF630 MOSFET – 200V 9A N-Channel Power MOSFET TO-220 Package

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Description

The IRF630 is suitable for a variety of power control applications, balancing high-voltage capability with a low Rds(on) to minimize power losses. Its fast switching characteristics make it ideal for high-frequency applications.

Features

  • High Voltage Rating: Withstands up to 200V drain-to-source voltage.
  • Moderate Current Handling: Supports up to 9A of continuous drain current.
  • Low On-Resistance (Rds(on)): Offers low drain-to-source on-resistance (typically 0.4 ohms) for efficient operation.
  • Fast Switching: Optimized for high-speed switching applications, reducing switching losses.
  • TO-220 Package: Provides effective thermal management for better heat dissipation.

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 9A
Drain-Source Resistance (Rds On) 0.4Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 43 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 74W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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