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IRF610 MOSFET – 200V 3.3A N-Channel Power MOSFET TO-220 Package

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Description

The IRF610 offers a drain-to-source voltage rating of 200V and a continuous drain current of 3.3A, making it well-suited for medium-power, high-voltage applications. With low gate charge and fast switching characteristics, it is an efficient choice for high-speed switching applications.

Features

  • High Voltage Rating: Withstands up to 200V drain-to-source voltage.
  • Moderate Current Handling: Supports a continuous drain current of 3.3A.
  • Low On-Resistance (Rds(on)): Provides efficient operation with a low Rds(on) of about 1.5 ohms.
  • Fast Switching: Suitable for high-speed switching applications.
  • TO-220 Package: Ensures efficient thermal management and ease of mounting with heatsinks if needed.

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 3.3A
Drain-Source Resistance (Rds On) 1.5Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 8.2 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 36W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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