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IRF510 MOSFET – 100V 5.6A N-Channel Power MOSFET TO-220 Package

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Description

The IRF510 is an N-Channel MOSFET designed for low-voltage, high-speed switching applications. With a 100V drain-source voltage rating and a continuous drain current of 5.6A, it offers low on-resistance for efficient switching, making it ideal for use in power amplifiers, motor controllers, and other medium-power applications. The TO-220 package provides effective heat dissipation, ensuring reliable operation even at high current levels.

Features

  • Drain-source voltage: 100V
  • Continuous drain current: 5.6A
  • Low R<sub>DS(on)</sub> for reduced conduction losses
  • High-speed switching performance
  • HEXFET technology for ruggedness and reliability
  • TO-220 package for efficient thermal management
  • Ideal for medium-power applications like amplifiers and controllers

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 5.6A
Drain-Source Resistance (Rds On) 540mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 8.3 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 43W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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