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IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET TO-220 Package

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Description

The IRF3415 is an N-channel HEXFET power MOSFET designed for high-performance switching applications. With a 150V drain-source voltage rating and a continuous drain current capability of 43A, this MOSFET provides excellent efficiency for high-power applications. Its low on-resistance (R<sub>DS(on)</sub>) minimizes conduction losses, while its robust design ensures reliable performance in challenging conditions. The TO-220 package offers efficient thermal management, making it ideal for use in power supplies, motor control, and other power electronics systems.

Features

  • Drain-source voltage: 150V
  • Continuous drain current: 43A
  • Low on-resistance for reduced power losses
  • High-speed switching performance
  • HEXFET technology for high efficiency and ruggedness
  • TO-220 package for effective heat dissipation
  • Suitable for medium- to high-voltage applications

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 150V
Continuous Drain Current (Id) 43A
Drain-Source Resistance (Rds On) 42mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 200 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 200W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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