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IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET TO-220 Package

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Description

The IRF3205 is an N-channel HEXFET power MOSFET designed for high-current, low-voltage switching applications. With a 55V drain-source voltage rating and a continuous drain current of 110A, this MOSFET features low on-resistance (R<sub>DS(on)</sub>) for minimal power loss, making it ideal for use in power supplies, motor drivers, and other high-power systems. The TO-220 package allows for effective heat dissipation, ensuring stable operation under high currents.

Features

  • Drain-source voltage: 55V
  • Continuous drain current: 110A
  • Very low R<sub>DS(on)</sub> for reduced conduction losses
  • HEXFET technology for high efficiency and ruggedness
  • High-speed switching performance
  • TO-220 package for efficient thermal management
  • Suitable for high-current, low-voltage applications

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 110A
Drain-Source Resistance (Rds On) 8mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 146 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 200W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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