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IRF1407 MOSFET – 75V 130A N-Channel HEXFET Power MOSFET TO-220 Package

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Description

The IRF1407 is a high-performance N-channel HEXFET power MOSFET with a 75V drain-source voltage rating and a continuous drain current of 130A. Designed for high-efficiency, high-current switching applications, the IRF1407 features low on-resistance, allowing it to minimize conduction losses and improve power efficiency. The TO-220 package provides excellent thermal dissipation, making this MOSFET ideal for use in power supplies, motor drivers, and other high-power applications.

Features

  • Drain-source voltage: 75V
  • Continuous drain current: 130A
  • Low on-resistance for minimal power loss
  • High-speed switching performance
  • HEXFET technology for ruggedness and efficiency
  • TO-220 package for effective thermal management
  • Suitable for low-voltage, high-current applications

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 75V
Continuous Drain Current (Id) 130A
Drain-Source Resistance (Rds On) 7.8mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 250 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 330W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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