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IRF1404 MOSFET – 40V 202A N-Channel HEXFET Power MOSFET TO-220 Package

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₹174.00 (excluding 18% GST)

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Description

The IRF1404 is a high-performance N-channel HEXFET power MOSFET, designed for high-current, low-voltage switching applications. With a maximum drain-source voltage of 40V and a continuous drain current of 202A, this MOSFET is ideal for power electronics applications requiring efficient switching and low on-resistance. The TO-220 package provides excellent thermal management, making it suitable for high-power, high-efficiency applications like power supplies, motor controllers, and automotive systems.

Features

  • High drain-source voltage: 40V
  • Very high continuous drain current: 202A
  • Low on-resistance for minimal power loss
  • TO-220 package for effective heat dissipation
  • HEXFET technology for high switching performance and efficiency
  • Suitable for low-voltage, high-current applications

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 40V
Continuous Drain Current (Id) 202A
Drain-Source Resistance (Rds On) 4mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 196 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 333W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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