10 In stock
₹52.00 (excluding 18% GST)
10 In stock
CompareThe IRF1010 is an N-channel HEXFET power MOSFET designed for high-current, low-voltage switching applications. With a maximum drain-source voltage of 60V and a continuous drain current of 84A, this MOSFET is ideal for demanding power applications. The TO-220 package ensures efficient thermal performance, making the IRF1010 suitable for use in power supplies, motor drives, and DC-DC converters.
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 84A |
| Drain-Source Resistance (Rds On) | 12mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 130 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 200W |
* Product Images are shown for illustrative purposes only and may differ from actual product
There are no reviews yet.