Features

• Floating Channel: Can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration with a voltage range up to 600V.
• Gate Drive Supply Range: Operates between 10V and 20V, ensuring compatibility with standard MOSFETs and IGBTs.
• Undervoltage Lockout (UVLO): Both high-side and low-side drivers are protected against low voltage conditions, ensuring safe operation.
• Integrated Bootstrap Diode: Simplifies circuit design by reducing the need for external components to generate the high-side drive voltage.
• Dead-Time Control: Adjustable dead time between high-side and low-side switches to prevent shoot-through (cross-conduction).
• Fast Switching: Propagation delays are typically 120 ns, enabling high-frequency operation.
• CMOS and LSTTL Compatible Input: Compatible with standard logic levels, allowing for easy interfacing with microcontrollers and DSPs.
• Latch-Up Protection: Prevents latch-up conditions in high-power operations, enhancing reliability.
• Separate Logic and Power Ground Pins: Improves noise immunity and simplifies circuit layout.