Description
The G60N100BNTD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current applications. With a voltage rating of 1000V and a current rating of 60A, this IGBT is ideal for various power conversion and control applications that require robust performance and efficiency. Its design incorporates advanced technology to ensure fast switching speeds and minimal losses.
There are no reviews yet.