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G160N60 IGBT – 600V 50A Ultra-Fast IGBT

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₹549.00 (excluding 18% GST)

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Description

The G160N60 is an ultra-fast Insulated Gate Bipolar Transistor (IGBT) designed for high-performance switching applications. This device combines the advantages of MOSFETs and bipolar transistors, making it suitable for demanding power conversion tasks. With a voltage rating of 600V and a current rating of 50A, the G160N60 is ideal for applications that require rapid switching and high efficiency.

Features

  • High Voltage Rating: 600V, suitable for medium-voltage applications.
  • High Current Rating: 50A, capable of handling substantial power loads efficiently.
  • Ultra-Fast Switching Speed: Designed for rapid switching, significantly reducing switching losses and enhancing efficiency in PWM (Pulse Width Modulation) applications.
  • Low On-State Voltage Drop: Minimizes conduction losses during operation, which improves overall energy efficiency.
  • Thermal Performance: Excellent thermal stability, allowing reliable operation under high thermal stress.
  • Robust Gate-Emitter Protection: Designed to withstand transients and protect the gate from over-voltage conditions.
  • Easy to Drive: Compatible with standard gate driver circuits.

Specifications

  • Type: N-channel IGBT
  • Collector-Emitter Voltage (VCE): 600V
  • Continuous Collector Current (IC): 50A
  • Max Pulsed Collector Current (ICM): Typically higher for short durations (refer to the datasheet for specifics).
  • Gate-Emitter Voltage (VGE): ±20V
  • Max Gate Power Dissipation: Generally around 2W (check the specific datasheet for accurate values).
  • Thermal Resistance (Junction to Case): Approximately 0.5°C/W (consult the datasheet for precise information).
  • Operating Temperature Range: -40°C to +150°C
  • Package Type: Usually available in standard packages (like TO-220 or similar), facilitating easy mounting and thermal management.

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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