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FGA25N120ANTD IGBT – 1200V 25A NPT Trench IGBT

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Description

The FGA25N120ANTD IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor device designed for high-voltage applications. This NPT (Non-Punch-Through) Trench IGBT offers low conduction and switching losses, making it an ideal choice for various applications, including motor control, power inverters, and industrial power supplies.

Features

  • High Voltage Rating: 1200V, enabling it to be used in high-voltage power applications.
  • Current Rating: 25A, suitable for a range of medium-power applications.
  • Low On-State Voltage Drop: Provides high efficiency and reduced power dissipation during operation.
  • Fast Switching Characteristics: Enhances performance in PWM (Pulse Width Modulation) applications, improving overall system efficiency.
  • Robust Design: Built to handle high thermal and electrical stresses, ensuring reliability in demanding environments.
  • Trench Technology: Utilizes trench gate structure for lower conduction losses and improved switching performance.

Specifications

  • Type: N-channel IGBT
  • Collector-Emitter Voltage (VCE): 1200V
  • Continuous Collector Current (IC): 25A
  • Gate-Emitter Voltage (VGE): ±20V
  • Max Gate Power Dissipation: 2W
  • Thermal Resistance (Junction to Case): Typically around 0.5°C/W (check specific datasheet for accuracy).
  • Operating Temperature Range: -40°C to +150°C
  • Package Type: TO-220, allowing for effective heat dissipation and easy mounting.

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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