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FDP090N10 MOSFET – 100V 75A N-Channel Power Trench MOSFET TO-220 Package

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Description

The FDP090N10 is a high-performance N-channel Power MOSFET designed for high-current, low-voltage applications. With a drain-source voltage rating of 100V and a maximum continuous drain current of 75A, it is suitable for applications requiring efficient power management and switching. The MOSFET’s Trench technology minimizes on-resistance and improves switching performance, while its TO-220 package offers effective thermal management.

Features

  • High drain-source voltage: 100V
  • High continuous drain current: 75A
  • Ultra-low on-resistance due to Trench technology
  • TO-220 package for improved thermal performance
  • Optimized for high-speed switching applications
  • Suitable for high-power, low-voltage applications

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 75A
Drain-Source Resistance (Rds On) 9mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 116 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 208W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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