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FDN357P MOSFET – (SMD SOT-23 Package) – 30V 1.9A P-Channel Logic Level Enhancement Mode MOSFET

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Description

Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

  • -1.9 A, -30 V

                    RDS(ON) = 0.090Ω @ VGS = -4.5V

                    RDS(ON) = 0.060Ω @ VGS = -10V

  • Industry standard outline SOT-23 surface mount package using proprietary Super SOT-23 design for superior thermal and electrical capabilities.
  • High density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

Specifications

  • Drain-Source Voltage:  -30V
  • Gate-Source Voltage: ±20V
  • Drain Current – Continuous: -1.9A
  • Drain Current – Pulsed: -10A
  • Maximum Power Dissipation: 0.5-0.46W
  • Operating and Storage Junction Temperature Range: -55 to +150°C

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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