Description
This P-Channel 2.6V specified MOSFET uses advanced low voltage Power Trench process. It has been optimised for battery power management applications.
Electronic Component, SMD Components, SMD MOSFET
FDN306P MOSFET – (SMD SOT-23 Package) – 12V 2.6A P-Channel MOSFET
Availability:
1000 In stock
₹14.00 (excluding 18% GST)
1000 In stock
CompareFeatures
- -2.4 A, -20 V.
RDS(ON) = 40 mΩ @ VGS = -4.5V
RDS(ON) = 50 mΩ @ VGS = -2.5V
RDS(ON) = 80 mΩ @ VGS = -1.8V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- Super SOT-23 provides Low RDS(ON) and 30% Higher Power
- Handling Capability than SOT23 in the same Footprint
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
- Battery management
- Load switch
- Battery protection
Specifications
- Drain-Source Voltage: -12V
- Gate-Source Voltage: ±8V
- Drain Current – Continuous: -2.6A
- Drain Current – Pulsed: -10A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
Note
* Product Images are shown for illustrative purposes only and may differ from actual product
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