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BFW11 Philips N-Channel Depletion JFET 30V 10mA TO-72 Package

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Description

The BFW11 is an N-channel depletion-mode junction field-effect transistor (JFET) primarily designed for RF amplification applications. With a maximum drain-source voltage of 30V and a drain current of 10mA, this JFET is suitable for various low-noise and high-gain circuits. Encased in a TO-72 package, the BFW11 provides reliable performance and stability in diverse electronic applications.

Features

  • Type: N-Channel Depletion JFET
  • Voltage Rating: 30V (VDS)
  • Current Rating: 10mA (ID)
  • Depletion Mode: Operates effectively with a negative gate-source voltage.
  • High Input Impedance: Excellent for high-impedance signal applications.
  • TO-72 Package: Compact and easy to integrate into circuit designs.

Specifications

Transistor Polarity N-Channel
Drain-Source Voltage (VDS) 30VDC
Drain-Gate Voltage (VDG) 30VDC
Reverse Gate-Source Voltage (VGSR) 30VDC
Forward Gate Current (IGF) 10mA
Gate-Source Cut-off Voltage (VGS(off)) 6VDC
Gate-Source Voltage (VGS) 4VDC
Zero-Gate Voltage Drain Current (IDSS) 10mA
Operating Temperature Range -65 – 150°C
Power Dissipation (PD) 300mW

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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