10 In stock
₹230.00 (excluding 18% GST)
10 In stock
CompareThe BFW10 is an N-channel depletion-mode junction field-effect transistor (JFET) designed for RF and general-purpose amplification applications. It operates at a maximum drain-source voltage of 30V and can handle a drain current of up to 20mA. Housed in a TO-72 package, the BFW10 provides excellent thermal stability and is suitable for use in various electronic circuits.
| Transistor Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 30VDC |
| Drain-Gate Voltage (VDG) | 30VDC |
| Reverse Gate-Source Voltage (VGSR) | 30VDC |
| Forward Gate Current (IGF) | 10mA |
| Gate-Source Cut-off Voltage (VGS(off)) | 8VDC |
| Gate-Source Voltage (VGS) | 7.5VDC |
| Zero-Gate Voltage Drain Current (IDSS) | 20mA |
| Operating Temperature Range | -65 – 150°C |
| Power Dissipation (PD) | 300mW |
* Product Images are shown for illustrative purposes only and may differ from actual product
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