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2SK2611 MOSFET – 900V 9A N-Channel Power MOSFET TO-3PN Package

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Description

The 2SK2611 is an N-channel power MOSFET designed primarily for high-voltage, high-power switching applications. With a maximum drain-source voltage of 900V and a drain current of up to 9A, it is ideal for power supplies, inverters, and other applications requiring efficient switching and high voltage handling. It comes in a TO-3PN package, which offers enhanced heat dissipation and is suitable for power management circuits.

Features

  • High Voltage: Supports a maximum drain-source voltage of 900V, suitable for high-power applications.
  • High Current Capability: Can handle a continuous drain current of 9A.
  • Low On-Resistance: Features low RDS(on)_{text{DS(on)}}, ensuring reduced power loss and efficient operation.
  • TO-3PN Package: Provides excellent thermal dissipation, making it suitable for applications with substantial power requirements.
  • Enhanced Durability: Rugged and durable, with a high avalanche energy capability, making it suitable for demanding switching environments.

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 900V
Continuous Drain Current (Id) 9A
Drain-Source Resistance (Rds On) 1.1Ohms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg) 58 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 150W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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