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2SK1118 MOSFET – 600V 6A N-Channel Power MOSFET TO-220F Package

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Description

The 2SK1118 offers low on-resistance, which minimizes power losses during operation. The high voltage handling capability makes it reliable for high-voltage switching applications, and the TO-220F package supports enhanced safety with isolation from the heatsink.

Features

  • High Voltage Rating: 600V drain-source voltage for high-power applications.
  • Moderate Current Handling: Supports 6A continuous drain current.
  • TO-220F Insulated Package: Provides electrical isolation, simplifying mounting on heatsinks.
  • Low On-Resistance: Reduces power loss, improving efficiency.

Specifications

  • Device Type: N-channel power MOSFET
  • Drain-Source Voltage (V<sub>DS</sub>): 600V
  • Continuous Drain Current (I<sub>D</sub>): 6A (at 25°C)
  • Gate Threshold Voltage (V<sub>GS(th)</sub>): 2.0 – 4.0V
  • R<sub>DS(on)</sub>: 1.8 ohms max at V<sub>GS</sub> = 10V
  • Total Gate Charge (Qg): 30nC at V<sub>GS</sub> = 10V
  • Power Dissipation (P<sub>D</sub>): 30W
  • Package Type: TO-220F (fully insulated)
  • Operating Junction Temperature (T<sub>j</sub>): -55°C to 150°C

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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