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20N60 MOSFET – 650V 20.7A N-Channel Power MOSFET TO-247 Package

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Description

The 20N60 MOSFET offers low on-resistance and high-speed switching capabilities, minimizing energy losses during operation. Its high-voltage rating and durable TO-247 package make it a reliable choice for industrial and commercial high-power switching applications.

Features

  • High Voltage and Current Capacity: 650V drain-source voltage and 20.7A continuous drain current.
  • Low On-Resistance: Reduces conduction losses, improving efficiency in high-power applications.
  • TO-247 Package: Enables efficient heat dissipation, supporting high-power operation with heatsinks.
  • Robust Construction: Withstands high voltage surges and demanding operating conditions.

Specifications

  • Device Type: N-channel MOSFET
  • Drain-Source Voltage (V<sub>DS</sub>): 650V
  • Continuous Drain Current (I<sub>D</sub>): 20.7A (at 25°C)
  • Gate Threshold Voltage (V<sub>GS(th)</sub>): 3.0 – 5.0V
  • R<sub>DS(on)</sub>: 0.27 ohms max at V<sub>GS</sub> = 10V
  • Total Gate Charge (Qg): 140nC at V<sub>GS</sub> = 10V
  • Power Dissipation (P<sub>D</sub>): 500W
  • Package Type: TO-247
  • Operating Junction Temperature (T<sub>j</sub>): -55°C to 150°C

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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