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1N60 Germanium Diode

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₹10.00 (excluding 18% GST)

10 In stock

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Description

The 1N60 is a Germanium signal diode that offers a low forward voltage drop (around 0.2V to 0.3V) compared to silicon diodes, making it highly efficient for signal detection and rectification in low-power circuits. Its fast switching speed and low junction capacitance make it ideal for high-frequency applications such as radio receivers, detectors, and general small-signal rectification.

Features

  • Low Forward Voltage Drop: Typically around 0.2V to 0.3V, which helps in efficient signal detection and minimizes power loss.
  • High Sensitivity: Ideal for weak signal detection in RF applications like AM/FM radios.
  • Fast Switching: The Germanium material provides a fast response time, making it suitable for high-frequency applications.
  • Low Reverse Leakage Current: Helps reduce power loss in reverse bias operation.
  • Compact Package: Available in a DO-7 glass package for durability and easy integration into various circuits.

Specifications

  • Maximum Reverse Voltage (V_R): 90V
  • Maximum Forward Continuous Current (I_F): 50mA
  • Forward Voltage (V_F): 0.2V to 0.3V at 1mA
  • Reverse Leakage Current (I_R): 0.5μA at 10V
  • Junction Capacitance (C_j): 1.5pF at 1MHz
  • Operating Junction Temperature (T_j): -65°C to +75°C
  • Storage Temperature Range (T_stg): -65°C to +100°C
  • Package: DO-7 glass axial lead package

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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