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1N5819 40V 1A Schottky Barrier Diode

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Description

The 1N5819 is a 40V, 1A Schottky barrier diode that is well-known for its fast switching speed and low forward voltage drop. This diode is ideal for low-voltage applications where efficiency is critical, as its Schottky design minimizes energy loss and heat generation. It is commonly used in DC-DC converters, power supplies, and freewheeling diodes.

Features

  • Low Forward Voltage Drop: Typically around 0.2V to 0.45V, reducing power loss in the circuit.
  • Fast Switching: Provides quick response, making it suitable for high-speed switching applications.
  • High Efficiency: The Schottky design allows for higher efficiency compared to standard diodes, especially in low-voltage power supplies.
  • Low Reverse Leakage Current: Helps minimize power loss during reverse blocking.
  • Compact Package: Available in a DO-41 axial package, making it easy to integrate into various circuit designs.

Specifications

  • Maximum Repetitive Reverse Voltage (V_RRM): 40V
  • Maximum Forward Continuous Current (I_F): 1A
  • Surge Forward Current (I_FSM): 25A (for 8.3ms half sine-wave)
  • Forward Voltage (V_F): 0.2V to 0.45V (typical) at 1A
  • Reverse Leakage Current (I_R): 1mA at 40V
  • Junction Capacitance: 110pF at 1MHz
  • Operating Junction Temperature Range (T_j): -65°C to +125°C
  • Storage Temperature Range (T_stg): -65°C to +150°C
  • Package: DO-41 axial lead package

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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