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IRF820 MOSFET – 500V 2.5A N-Channel Power MOSFET TO-220 Package

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Description

The IRF820 is designed to offer high voltage tolerance and moderate current handling, with a relatively low on-resistance that ensures efficient operation. It is optimized for high-speed switching, making it suitable for applications where fast response times and energy efficiency are crucial.

Features

  • High Voltage Rating: Can handle up to 500V drain-to-source voltage.
  • Moderate Current Handling: Supports continuous drain currents up to 2.5A.
  • Low On-Resistance (Rds(on)): The MOSFET has a low on-resistance (typically 1.0 ohms) to minimize conduction losses.
  • Fast Switching: Optimized for high-speed switching, reducing energy loss during transitions.
  • TO-220 Package: Provides excellent thermal dissipation to ensure stable performance.

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 500V
Continuous Drain Current (Id) 2.5A
Drain-Source Resistance (Rds On) 3Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 17 nC
Operating Temperature Range -65 – 150°C
Power Dissipation (Pd) 50W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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