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IRF620 MOSFET – 200V 5.2A N-Channel Power MOSFET TO-220 Package

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Description

The IRF620 offers a combination of high voltage capability and low on-resistance, making it suitable for high-efficiency power applications. It can handle up to 5.2A of continuous current and operates efficiently in various electronic circuits requiring high voltage and moderate current levels.

Features

  • High Voltage Handling: Supports a maximum drain-to-source voltage of 200V.
  • Moderate Current Capacity: Handles up to 5.2A of continuous drain current.
  • Low Rds(on): Low drain-to-source on-resistance (typically 1.2 ohms), which reduces power loss.
  • Fast Switching Performance: Suitable for high-speed switching applications.
  • TO-220 Package: Provides effective thermal management for better performance under load.

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 5.2A
Drain-Source Resistance (Rds On) 0.8Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 14 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 50W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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