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IRF3710 MOSFET – 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package

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Description

The IRF3710 is a high-performance N-channel HEXFET power MOSFET designed for high-efficiency, high-current applications. With a 100V drain-source voltage rating and a continuous drain current capability of 57A, this MOSFET offers low on-resistance (R<sub>DS(on)</sub>) to reduce conduction losses, making it ideal for use in power supplies, motor control systems, and other high-current switching applications. The TO-220 package ensures excellent thermal dissipation for reliable performance under high-current conditions.

Features

  • Drain-source voltage: 100V
  • Continuous drain current: 57A
  • Very low R<sub>DS(on)</sub> for reduced conduction losses
  • High-speed switching performance
  • HEXFET technology for ruggedness and efficiency
  • TO-220 package for effective thermal management
  • Suitable for high-current, medium-voltage applications

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 57A
Drain-Source Resistance (Rds On) 23mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 130 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 200W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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