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IRF2807 MOSFET – 75V 82A N-Channel HEXFET Power MOSFET TO-220 Package

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10 In stock


57.00 (excluding 18% GST)

10 In stock

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Description

The IRF2807 is a high-performance N-channel HEXFET power MOSFET with a drain-source voltage rating of 75V and a continuous drain current capability of 82A. This MOSFET features a low on-resistance, reducing power losses and increasing efficiency in switching applications. The TO-220 package ensures excellent thermal management, making it ideal for use in power supplies, motor drivers, and other high-current applications.

Features

  • Drain-source voltage: 75V
  • Continuous drain current: 82A
  • Low R<sub>DS(on)</sub> for efficient power conversion
  • High-speed switching performance
  • HEXFET technology for robustness and low losses
  • TO-220 package for efficient heat dissipation

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 75V
Continuous Drain Current (Id) 82A
Drain-Source Resistance (Rds On) 13mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 160 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 230W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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