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IRF1405 MOSFET – 55V 169A N-Channel HEXFET Power MOSFET TO-220 Package

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Description

The IRF1405 is a high-performance N-channel HEXFET power MOSFET with a 55V drain-source voltage rating and a continuous drain current capability of 169A. This MOSFET is designed for high-current and low-voltage switching applications, offering low on-resistance and fast switching speed. The TO-220 package provides effective thermal dissipation, making the IRF1405 suitable for power supply designs, motor controllers, and other power electronics applications.

Features

  • Drain-source voltage: 55V
  • Continuous drain current: 169A
  • Low R<sub>DS(on)</sub> for reduced power losses
  • TO-220 package for efficient heat management
  • HEXFET technology ensures high efficiency and rugged performance
  • Fast switching speed for high-frequency operation

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 169A
Drain-Source Resistance (Rds On) 5.3mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 260 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 330W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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