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38N30 MOSFET – FQA38N30 300V 38.4A N-Channel Power MOSFET TO-3 Package

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Description

The FQA38N30 is a high-power N-channel MOSFET with a maximum drain-source voltage of 300V and a high continuous drain current of 38.4A, making it suitable for demanding applications. Its TO-3 package provides excellent thermal performance, which is ideal for high-current, high-power switching applications in power supplies, motor drives, and industrial equipment.

Features

  • High drain-source voltage: 300V
  • High continuous drain current: 38.4A
  • Low on-resistance for minimized power loss and improved efficiency
  • TO-3 package for enhanced heat dissipation
  • Optimized for high-power, high-speed switching applications
  • Robust construction for industrial applications

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 300V
Continuous Drain Current (Id) 38.4A
Drain-Source Resistance (Rds On) 85mOhms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg) 120 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 290W

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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