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2SK1120 MOSFET – 1000V 8A N-Channel Power MOSFET TO-3PN Package

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Description

The 2SK1120 MOSFET is optimized for low on-resistance and high-speed switching performance, ensuring efficiency in high-power applications. With a high breakdown voltage, it is well-suited for applications requiring reliable operation at elevated voltages.

Features

  • Extremely High Voltage Rating: 1000V drain-source voltage.
  • High Current Capability: 8A continuous drain current.
  • TO-3PN Package: Enables efficient heat dissipation with high thermal performance, ideal for high-power applications.
  • Low On-Resistance: Minimizes power loss, enhancing overall efficiency.

Specifications

  • Device Type: N-channel power MOSFET
  • Drain-Source Voltage (V<sub>DS</sub>): 1000V
  • Continuous Drain Current (I<sub>D</sub>): 8A (at 25°C)
  • Gate Threshold Voltage (V<sub>GS(th)</sub>): 3.0 – 5.0V
  • R<sub>DS(on)</sub>: 2.0 ohms max at V<sub>GS</sub> = 10V
  • Total Gate Charge (Qg): 140nC at V<sub>GS</sub> = 10V
  • Power Dissipation (P<sub>D</sub>): 200W
  • Package Type: TO-3PN
  • Operating Junction Temperature (T<sub>j</sub>): -55°C to 150°C

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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