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2N7000 FET – N-Channel Enhancement Mode FET TO-92 Package

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Description

The 2N7000 is known for its simplicity, ease of use, and compatibility with low-power applications. It operates with standard logic-level gate voltages, making it easy to drive directly from microcontrollers or logic circuits.

Features

  • Low Gate Threshold Voltage: Allows for easy interfacing with standard logic-level signals.
  • Compact TO-92 Package: Suitable for through-hole applications with space constraints.
  • Low On-Resistance: Ensures efficient switching with low power loss in low-power applications.
  • Reliable Performance: Rugged and suitable for low to moderate load switching.

Specifications

  • Device Type: N-channel enhancement-mode MOSFET
  • Drain-Source Voltage (V<sub>DS</sub>): 60V
  • Continuous Drain Current (I<sub>D</sub>): 200mA (at 25°C)
  • Gate Threshold Voltage (V<sub>GS(th)</sub>): 0.8 – 3.0V
  • R<sub>DS(on)</sub>: 5 ohms max at V<sub>GS</sub> = 10V
  • Total Gate Charge (Qg): 3.5nC at V<sub>GS</sub> = 10V
  • Power Dissipation (P<sub>D</sub>): 400mW
  • Package Type: TO-92
  • Operating Junction Temperature (T<sub>j</sub>): -55°C to 150°C

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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