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IRGB430U MOSFET – 500V 15A N- Channel Power MOSFET TO-220 Package

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₹135.00 (excluding 18% GST)

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Description

The IRGB430U offers low on-resistance (R<sub>DS(on)</sub>), enabling efficient performance with minimal heat generation. This MOSFET is designed to handle demanding switching tasks while providing high durability and reliability in high-voltage environments.

Features

  • High Voltage and Current Capacity: 500V drain-source voltage and 15A continuous drain current.
  • Low On-Resistance: Reduces power losses, enhancing energy efficiency.
  • TO-220 Package: Suitable for mounting with heatsinks for improved thermal dissipation.
  • Robust Design: Capable of handling high-power loads and switching frequencies.

Specifications

  • Device Type: N-channel MOSFET
  • Drain-Source Voltage (V<sub>DS</sub>): 500V
  • Continuous Drain Current (I<sub>D</sub>): 15A (at 25°C)
  • Gate Threshold Voltage (V<sub>GS(th)</sub>): 2.0 – 4.0V
  • R<sub>DS(on)</sub>: 0.4 ohms max at V<sub>GS</sub> = 10V
  • Total Gate Charge (Qg): 160nC at V<sub>GS</sub> = 10V
  • Power Dissipation (P<sub>D</sub>): 250W
  • Package Type: TO-220
  • Operating Junction Temperature (T<sub>j</sub>): -55°C to 150°C

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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