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IRFZ14N MOSFET – 60V 10A N-Channel Power MOSFET TO-220 Package

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Description

The IRFZ14N offers a low on-state resistance (R<sub>DS(on)</sub>), which reduces power losses during operation, enhancing overall efficiency. The TO-220 package is well-suited for heatsink mounting, supporting its use in high-power circuits that require effective thermal management.

Features

  • High Current Handling: Supports up to 10A continuous drain current.
  • Low On-Resistance: Minimizes conduction losses for efficient performance.
  • TO-220 Package: Compatible with heatsinks for better thermal dissipation.
  • Rugged and Reliable: Designed for high switching speeds and robust operation.

Specifications

  • Device Type: N-channel MOSFET
  • Drain-Source Voltage (V<sub>DS</sub>): 60V
  • Continuous Drain Current (I<sub>D</sub>): 10A (at 25°C)
  • Gate Threshold Voltage (V<sub>GS(th)</sub>): 2.0 – 4.0V
  • R<sub>DS(on)</sub>: 0.06 ohms max at V<sub>GS</sub> = 10V
  • Total Gate Charge (Qg): 20nC at V<sub>GS</sub> = 10V
  • Power Dissipation (P<sub>D</sub>): 50W
  • Package Type: TO-220
  • Operating Junction Temperature (T<sub>j</sub>): -55°C to 150°C

Note

* Product Images are shown for illustrative purposes only and may differ from actual product

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