Features

• High and Low-Side Gate Drive: Capable of driving both high-side and low-side MOSFETs or IGBTs with independent control.
• Bootstrap Operation: Built-in bootstrap diode allows for high-side driving with a bootstrap capacitor, simplifying the circuit design.
• High-Speed Switching: Designed to handle high-speed switching applications with short propagation delays.
• Undervoltage Lockout (UVLO): Provides protection by shutting down the outputs if the supply voltage drops below a certain threshold, ensuring safe operation.
• Shoot-Through Protection: Built-in dead-time control to prevent shoot-through currents that can occur if both high-side and low-side transistors are on simultaneously.
• CMOS Schmitt-Trigger Inputs: Provides noise immunity for reliable operation in noisy environments.
• Over-Temperature Protection: Protects the IC and surrounding circuitry by shutting down the gate driver when the temperature exceeds safe limits.